Fast Tech, August 18 news, semiconductor company NEO Semiconductor recently announced the launch of 3D X-AI chip technology, designed to replace existing DRAM chips in high-bandwidth memory (HBM) to enhance AI processing performance and significantly reduce energy consumption.

The 3D X-AI chip integrates 8,000 neuron circuits that perform AI processing tasks directly within the 3D DRAM, achieving a 100-fold acceleration in AI performance.

At the same time, due to the significant reduction in data transmission requirements, the chip's power consumption is reduced by 99%, effectively mitigating power consumption and heat generation issues in the data bus.

NEO Semiconductor's innovation also brings an 8-fold increase in memory density, with its 3D X-AI chip containing 300 DRAM layers, supporting the operation of larger-scale AI models.

The company had previously announced the world's first 3D DRAM technology, and the 3D X-AI chip builds upon this foundation with further innovations, achieving up to 10 TB/s of AI processing throughput per chip through HBM-like stack packaging.

Andy Hsu, founder and CEO of NEO Semiconductor, pointed out that the separation of data storage and processing in current AI chip architectures leads to performance bottlenecks and high power consumption issues.

The 3D X-AI chip significantly reduces the amount of data transmitted between HBM and GPU by performing AI processing within each HBM chip, thereby enhancing performance and reducing power consumption.

Industry analyst Jay Kramer believes that the application of 3D X-AI technology will accelerate the development of emerging AI use cases and drive the creation of new use cases, ushering in a new era of AI application innovation.